A high Q inductive clement with low losses, high inductance and high
efficiency is disclosed. The high Q inductive element with one or more
inductive loops is formed over a silicon micro structure with thin support
elements formed by deep plasma etching in bulk silicon. The support
elements, which may have different configurations, such as walls or
columns, provide mechanical stability to the inductive loops and reduce
the parasitic capacitance and the losses to the substrate.
