An exemplary system and method for providing an integrated photosensing
element suitably adapted for use in CMOS imaging applications is disclosed
as comprising inter alia: a processed CMOS host wafer (460) bonded with a
monocrystalline, optically active donor wafer (300); a photosensing
element (390) integrated in said optically active donor wafer (300) having
an interconnect via (505, 495, 485) substantially decoupled from the
photosensing element (390), wherein the host (460) and donor (300) wafers
are bonded through the optically active material in a region disposed near
a metalization surface (450, 455, 445) of the CMOS layer (460) in order to
allow fabrication of the interconnect (505, 495, 485). Disclosed features
and specifications may be variously controlled, configured, adapted or
otherwise optionally modified to further improve or otherwise optimize
photosensing performance or other material characteristics. Exemplary
embodiments of the present invention representatively provide for
integrated photosensing components that may be readily incorporated with
existing technologies for the improvement of CMOS imaging, device package
form factors, weights and/or other manufacturing, device or material
performance metrics.
