In a developing processing of a wafer having a resist film low in the
dissolving rate in a developing solution formed thereon and subjected to
an exposure treatment, a developing solution of a low concentration is
supplied first onto a wafer and the wafer is left to stand for a
prescribed time to permit a developing reaction to proceed, followed by
further supplying a developing solution having a concentration higher than
that of the developing solution supplied first onto the wafer, leaving the
substrate to stand and subsequently rinsing the wafer, thereby improving
the uniformity of the line width in the central portion and the peripheral
portion of the wafer.
