Asymmetric InGaAsN vertical cavity surface emitting lasers

   
   

Various asymmetric InGaAsN VCSEL structures that are made using an MOCVD process are presented. Use of the asymmetric structure effectively eliminates aluminum contamination of the quantum well active region.

Различные асимметричные структуры InGaAsN VCSEL сделаны использующ процесс mocvd. Польза асимметричной структуры эффективно исключает алюминиевое загрязнение зоны добра суммы активно.

 
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