A method for forming integrated dielectric layers using plasma energy
includes (i) depositing a first dielectric layer on a substrate using a
first reaction gas comprised of a source gas at a first source gas flow
rate and an inert gas at a first inert gas flow rate, wherein the first
inert gas flow rate is no more than 40% of the first source gas flow rate,
and (ii) continuously depositing a second dielectric layer on top of the
first dielectric layer using a second reaction gas comprised of a source
gas at a second source gas flow rate and an inert gas at a second inert
gas flow rate, wherein the second inert gas flow rate is 40% or higher of
the second source gas flow rate.
