The present invention provides a process for producing particles suitable
for use as abrasives in chemical-mechanical polishing slurries. The
process according to the invention includes mixing at least one
crystallization promoter such as Ti[OCH(CH.sub.3).sub.2)].sub.4 with at
least one cerium compound and at least one solvent, and subjecting said
mixture to hydrothermal treatment at a temperature of from about
60.degree. C. to about 700.degree. C. to produce the particles. Particles
formed in accordance with the present invention exhibit a large
crystallite size, and can be used to polish silicon-containing substrates
to a high degree of planarity at a relatively high rate.
