Programming of nonvolatile memory cells

   
   

A method for programming an NROM cell which includes the steps of applying a drain, a source and a gate voltage to the cell and verifying a programmed or a non-programmed state of the cell. If the cell is in the non-programmed state, the method includes the steps of increasing the drain voltage and maintaining the gate voltage at a constant level during at least a part of the step of increasing. The steps of applying, verifying, increasing and maintaining are repeated until the cell reaches the programmed state.

Um método para programar uma pilha de NROM que inclua as etapas de aplicar um dreno, uma fonte e uma tensão da porta à pilha e a verificar programada ou um estado non-programmed da pilha. Se a pilha estiver no estado non-programmed, o método inclui as etapas de aumentar a tensão do dreno e de manter a tensão da porta em um nível constante durante ao menos uma parte da etapa do aumento. As etapas de aplicar-se, de verificar, do aumentar e de manter são repetidas até que a pilha alcance o estado programado.

 
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