The present invention provide a vertical nano-sized transistor using carbon
nanotubes capable of achieving high-density integration, that is, tera-bit
scale integration, and a manufacturing method thereof, wherein in the
vertical nano-sized transistor using carbon nanotubes, holes having
diameters of several nanometers are formed in an insulating layer and are
spaced at intervals of several nanometers. Carbon nanotubes are vertically
aligned in the nano-sized holes by chemical vapor deposition,
electrophoresis or mechanical compression to be used as channels. A gate
is formed in the vicinity of the carbon nanotubes using an ordinary
semiconductor manufacturing method, and then a source and a drain are
formed at lower and upper parts of each of the carbon nanotubes thereby
fabricating the vertical nano-sized transistor having an electrically
switching characteristic.
