As etch-stop films or Cu-diffusion barrier films used in insulation films
constituting conductor layers of a stacked structure, films having smaller
dielectric constant than silicon nitride films are used, and an insulation
film at a lower-layer part of the stacked structure is made to have
smaller dielectric constant than that at an upper-layer part thereof, and
further this insulation film is a silicon oxide (SiO) film and has in the
interior thereof, nano-pores of from 0.05 nm or more to 4 nm or less in
diameter as chief construction. This makes it possible to dramatically
reduce effective dielectric constant while keeping the mechanical strength
of the conductore layers themselves, and can materialize a highly reliable
and high-performance semiconductor device having mitigated the wiring
delay of signals which pass through wirings.
