A semiconductor light receiving element has a semiconductor portion. The
semiconductor portion includes a substrate, a light detecting portion, and
a filter portion. The substrate, the light detecting portion, and the
filter portion are provided sequentially in a direction of a predetermined
axis. The light detecting portion has a light absorbing layer including a
III-V semiconductor layer, a window layer including a III-V semiconductor
layer, and an anode semiconductor region. The light absorbing layer is an
n or i conductivity type semiconductor layer. The light absorbing layer is
provided between a III-V semiconductor layer and the window layer. The
light detecting portion is provided on one face of the semiconductor
substrate with the III-V semiconductor layer interposed therebetween. The
filter portion includes InGaAsP semiconductor layers and III-V
semiconductor layers.
