A mask pattern correction method includes the step of extracting a
correction target edge from a design pattern, the step of calculating the
distance from the correction target edge to the nearest edge of an
adjacent pattern, the step of calculating the correction value by a
simulation in accordance with a pattern layout present within a given
range determined by the correction target edge, and moving the correction
target edge on the basis of the calculated correction value when the
distance calculated in the distance calculation step is smaller than a
predetermined distance, and the step of moving the correction target edge
on the basis of an correction value set as a rule in advance in accordance
with the distance when the distance calculated in the distance calculation
step is larger than the predetermined distance.
