The object of the invention is to provide a semiconductor device having a
nitride-based hetero-structure in which an epitaxial nitride film has a
uniformly flat surface at a single molecule level, and a method of easily
fabricating such a device. The object of the invention is achieved by
providing a semiconductor device comprising a sapphire substrate whose
c-surface is modified to be nitride-surfaced, GaN buffer layer, N polarity
GaN layer, N polarity AlN layer, N polarity InN/InGaN multi-layered device
structure, Al polarity AlN layer, and GaN cap layer.
