Method for fabricating III-V compound semiconductor

   
   

A method for fabricating a III-V Group compound semiconductor comprising a step of epitaxially growing on an Al.sub.x Ga.sub.1-x As layer of lower Al content an Al.sub.x Ga.sub.1-x As layer of higher Al content, in which step a growth rate of the Al.sub.x Ga.sub.1-x As layer of higher Al content is made slower than a growth rate of the Al.sub.x Ga.sub.1-x As layer of lower Al content, thereby effectively inhibiting the occurrence of starting points of abnormal growth at the interface between the two layers.

 
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