In a semiconductor light emitting device such as a semiconductor laser
using nitride III-V compound semiconductors and having a structure
interposing an active layer between an n-side cladding layer and a p-side
cladding layer, the p-side cladding layer is made of an undoped or n-type
first layer 9 and a p-type second layer 12 that are deposited sequentially
from nearer to remoter from the active layer. The first layer 9 is not
thinner than 50 nm. The p-type second layer 12 includes a p-type third
layer having a larger band gap inserted therein as an electron blocking
layer. Thus the semiconductor light emitting device is reduced in
operation voltage while keeping a thickness of the p-side cladding layer
necessary for ensuring favorable optical properties.
