A ferroelectric memory cell array and a device for driving the same are
disclosed, in which the ferroelectric memory cell array is defined as
first and second cell regions each using at least one group of four split
wordlines to reduce a layout area of the memory cell array and/or a RC
load when a split wordline is used as a plate line. In the first cell
region, the first and third split wordlines are used as wordlines, and the
second and fourth split wordlines are used as plate lines. In the second
cell region, the second and fourth split wordlines are used as wordlines
and the first and third split wordlines are used as plate lines.
