There are provided silicon single crystal, silicon wafer, and epitaxial
wafer having a sufficient gettering effect suitable for a large-scale
integrated device. The silicon single crystal which is suitable for an
epitaxial wafer is grown with nitrogen doping at a concentration of
1.times.10.sup.13 atoms/cm.sup.3 or more, or with nitrogen doping at a
concentration of 1.times.10.sup.12 atoms/cm.sup.3 and carbon doping at a
concentration of 0.1.times.10.sup.16 -5.times.10.sup.16 atoms/cm.sup.3
and/or boron doping at a concentration of 1.times.10.sup.17 atoms/cm.sup.3
or more. The silicon wafer is produced by slicing from the silicon single
crystal, and an epitaxial layer is grown on a surface of the silicon wafer
to produce the epitaxial wafer. The present invention provides an
epitaxial wafer for a large-scale integrated device having no defects in a
device-active region and having an excellent gettering effect without
performance of an extrinsic or intrinsic gettering treatment, which is a
factor for increasing the number of production steps and production costs.
