An exchange coupling film has an antiferromagnetic layer made of an
antiferromagnetic material containing an element X and Mn, where the
element X is selected from the group of elements consisting of Pt, Pd, Ir,
Rh, Ru, and Os, and combinations thereof. The antiferromagnetic layer has
a region in which the ratio of the atomic percent of the element X to Mn
increases in a direction towards said ferromagnetic layer. The crystalline
structure of at least part of said antiferromagnetic layer has a CuAu0I
type face-centered square ordered lattice.
