Broad spectrum light emitting devices and methods and semiconductor chips for
fabricating such devices include a light emitting element, such as a diode or laser,
which emits light in a predefined range of frequencies. The light emitting element
includes a shaped substrate suitable for light extraction through the substrate
and a cavity in the substrate proximate the light emitting element. For example,
a trench adjacent at least a portion of the periphery of the light emitting element
may be provided. The cavity/trench is configured to contain light conversion material
such that light extracted from sidewalls of the cavity/trench passes through the
light conversion material contained in the cavity/trench. Methods of fabricating
such devices and/or chips are also provided.
