A new magnetic RAM cell device is achieved. The device comprises a plurality
MTJ
cells each comprising a free layer and a pinned layer separated by a dielectric
layer. A common conductive layer couples together all of the pinned layers of the
MJT cell. A first end of the common conductive layer is switchably coupled to a
programming line. A second end of the common conductive layer is switchably coupled
to a ground. A pluraity of diodes is used. Each diode is coupled between one of
the MJT cells and one of a plurality of bit lines.
