In order to provide an active matrix display device in which a thick insulating
film is preferably formed around an organic semiconductive film of a thin film
luminescent device without damaging the thin film luminescent device, the active
matrix display device is provided with a bank layer (bank) along a data line (sig)
and a scanning line (gate) to suppress formation of parasitic capacitance in the
data line (sig), in which the bank layer (bank) surrounds a region that forms the
organic semiconductive film of the thin film luminescent device by an ink-jet process.
The bank layer (bank) includes a lower insulating layer formed of a thick organic
material and an upper insulating layer of an organic material which is deposited
on the lower insulating layer and has a smaller thickness so as to avoid contact
of the organic semiconductive film with the upper insulating layer.
