An electronic device supported on a semiconductor substrate. The semiconductor
device includes a diffusion area in the substrate and a polysilicon layer extending
over the substrate and contacting the diffusion area. The electronic device further
includes a conductive contact covering and contacting both the polysilicon layer
and the diffusion area. Therefore, the semiconductor device disclosed in this invention
includes poly-to-diffusion connection for a semiconductor device that has a diffusion
are and a polysilicon area. The semiconductor device further includes a contact
that covers both the diffusion area and the polysilicon area with a contact filling
material forming the connection between these two areas.
