A non-volatile semiconductor memory device comprising a first conductive semiconductor
having steps on a surface thereof, a second conductive semiconductor region formed
on an upper portion and a bottom portion of each of the steps and being separated
in a direction perpendicular to the main surface of the first conductive semiconductor
to function as a source or a drain, a gate dielectric film containing therein charge
storage means which is spatially discrete and being formed on the first conductive
semiconductor so as to coat at least a sidewall of each of the steps, and a gate
electrode formed on the gate dielectric film. Accordingly, there are provided a
non-volatile semiconductor memory device which suffers almost no deterioration
in the properties and can perform the operation of recording of 2 bits per unit
memory device even when the size of the semiconductor memory device in the semiconductor
substrate is scaled down, and a process for fabricating the non-volatile semiconductor
memory device.
