The present invention provides a threshold voltage stabilizer for use with a
MOS transistor having a body effect associated therewith. In one embodiment, the
threshold voltage stabilizer, includes a body well located in a substrate, a source
located in the body well, and a stabilization region positioned below the body
well. The threshold voltage stabilizer is configured to provide a stabilization
voltage to the stabilization region to increase a depletion region within the body
well and thereby restrict the body effect to stabilize a threshold voltage of the
MOS transistor.
