A straddled gate device, and a method of producing such device, formed on a semiconductor-on-insulator
(SOI) substrate having active regions defined by isolation regions and an insulator
layer. The device includes a first gate defining a first channel region interposed
between a source and a drain formed within the active region of the SOI substrate.
Additionally, the device includes a second gate straddling the first gate defining
second channel regions interposed between the first channel region and the source
and the drain. Further still, the device includes a contact connecting the first
gate with the second gate wherein when the device is in the off state (Ioff)
the first channel region and second channel regions define a long channel and when
the device is in the on state (Ion) the first channel region defines
a short channel.
