A power semiconductor device is disclosed, which comprises a semiconductor layer
including a first semiconductor layer of a first conductivity type and a second
semiconductor layer of a second conductivity type, which are periodically formed
in the lateral direction, and a power semiconductor element including the semiconductor
layers that are formed periodically, wherein a distribution of an amount of an
impurity in a vertical direction of the first semiconductor layer differs from
a distribution of an amount of an impurity in the vertical direction of the second
semiconductor layer.
