A ball-up preventive layer is formed on a first substrate. A bonding layer made
of eutectic material is formed on the ball-up preventive layer. A semiconductor
light emitting structure is formed on a second substrate. A first electrode is
formed at least partially on the semiconductor light emitting structure. A barrier
layer is formed on the first electrode. A metal layer is formed on the barrier
layer. The bonding layer and the metal layer are bonded together. The second substrate
is removed from the bonded structure. A second electrode is formed on a partial
surface area of the semiconductor light emitting structure exposed on a surface
of the bonded structure to obtain a semiconductor light emitting device.
