Structures and methods for write once read only memory employing charge
trapping are provided. The write once read only memory cell includes a metal oxide
semiconductor field effect transistor (MOSFET) in a substrate. The MOSFET has a
first source/drain region, a second source/drain region, and a channel region between
the first and the second source/drain regions. A gate insulator is formed opposing
the channel region. The gate insulator includes a number of high work function
nanoparticles. A gate is formed on the gate insulator. A plug is coupled to the
first source/drain region and couples the first source/drain region to an array
plate. A transmission line is coupled to the second source/drain region. The MOSFET
is a programmed MOSFET having a charge trapped in the number of high work function
nanoparticles in the gate insulator adjacent to the first source/drain region.
