The present invention provides a bipolar transistor and a method of
manufacture thereof. The bipolar transistor includes a dielectric region
located in a semiconductor substrate and a collector located in the
semiconductor substrate and at least partially over the dielectric region.
The bipolar transistor device further includes a base located over and in
contact with the dielectric region and at least partially about the
collector and an emitter located over and in contact with the dielectric
region and adjacent the base.
