A semiconductor memory device includes a column decoder, a row decoder, a
memory cell array block, and a sense amplifier block. The sense amplifier
block is disposed adjacent to the memory cell array block. The column
decoder is disposed at one side of the memory cell array block, and the
row decoder is disposed at another side of the memory cell array block.
First output lines of the row decoder pass over the sense amplifier block
and are formed of first metal layers. Second output lines of the row
decoder pass over the memory cell array block and are formed of second
metal layers. Output lines of the column decoder pass over the sense
amplifier block and the memory cell array block. Portions of the output
lines of the column decoder passing over the sense amplifier block are
formed of the second metal layers and portions of the output lines of the
column decoder that pass over the memory cell array block are formed of
the first metal layers.
