Focused ion beam apparatus

   
   

A method for correcting drifts in beam irradiation position in a focused ion beam apparatus is disclosed. A linear line pattern is formed on a sample by linearly irradiating a focused ion beam at a location removed from a processing region where a cross section is to be formed in the sample. The linear line pattern extends in a direction in parallel with a surface of the cross section to be formed. By referring to the linear line pattern while a specified section of the sample is processed, the beam irradiation position of the focused ion beam with respect to the linear line pattern is measured in a direction perpendicular to the linear line pattern to detect a drift in the beam irradiation position of the focused ion beam in the direction perpendicular to the linear line pattern. The beam irradiation position of the focused ion beam is corrected based on the drift detected with respect to the processing region.

 
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