A refined SiC single crystal that includes a small number of defects is provided
as follows. At a first growth step, a first seed crystal is formed from a crude
SiC single crystal, and a first grown crystal is formed on a first growth surface,
which is a plane having an inclination of 20 degrees or smaller from a {1-100}
plane or an inclination of 20 degrees or smaller from a {11-20} plane. At an intermediate
growth step, an n growth crystal is formed on an n growth surface, which is a plane
having an inclination of 45 to 90 degrees from an (n-1) growth surface and an inclination
of 60 to 90 degrees from a {0001} plane. At a final growth step, a final SiC single
crystal is formed on a final growth surface, which has an inclination of 20 degrees
or smaller from a {0001} plane.
