Methods and systems for monitoring semiconductor fabrication processes are
provided. A system may include a stage configured to support a specimen and coupled
to a measurement device. The measurement device may include an illumination system
and a detection system. The illumination system and the detection system may be
configured such that the system may be configured to determine multiple properties
of the specimen. For example, the system may be configured to determine multiple
properties of a specimen including, but not limited to, critical dimension and
overlay misregistration. In this manner, a measurement device may perform multiple
optical and/or non-optical metrology and/or inspection techniques.
