In a solid-state image pick-up device comprising a plurality of light receiving
sensor sections, a vertical transfer path 12 formed close to each of the
light receiving sensor sections, and a channel stopper 13 provided between
the adjacent vertical transfer paths 12 and formed by an insulating layer
having a trench structure, a conductive substance 15 to which a predetermined
voltage is applied is buried in the insulating layer 14. The predetermined
voltage is a negative voltage if a signal charge is an electron, and is a positive
voltage if the signal charge is a hole. Alternatively, the predetermined voltage
is a pulse having an opposite phase to that of a read pulse to be applied to a
transfer electrode 17 of the vertical transfer path 12.
