A nitride semiconductor light emitting device includes a processed substrate
(101a)
including a groove and a hill formed on a main surface of a nitride semiconductor
substrate, a nitride semiconductor underlayer (102) covering the groove
and the hill of the processed substrate, and a light emitting device structure
having a light emitting layer (106) including a quantum well layer or a
quantum well layer and a barrier layer in contact with the quantum well layer between
an n type layer (103-105) and a p type layer (107-110) over the nitride
semiconductor underlayer. A current-constricting portion of the light emitting
device structure is formed above a region more than 1 m away from the center
of the groove in the width direction and more than 1 m away from the center
of the hill in the width direction.
