Configurable electronic circuits comprise arrays of cross-points of
one layer of metal/semiconductive nanoscale lines crossed by a second layer of
metal/semiconductive nanoscale lines, with a configurable layer between the lines.
Methods are provided for altering the thickness and/or resistance of the configurable
layer by oxidation or reduction methods, employing a solid material as the configurable
layer. Specifically a method is provided for configuring nanoscale devices in a
crossbar array of configurable devices comprising arrays of cross-points of a first
layer of nanoscale lines comprising a first metal or a first semiconductor material
crossed by a second layer of nanoscale lines comprising a second metal or a second
semiconductor material. The method comprises: (a) forming the first layer on a
substrate; (b) forming a solid phase of a configurable material on the first layer
at least in areas where the second layer is to cross the first layer; (c) forming
the second layer on the configurable material, over the first layer; and (d) changing
a property of the configurable material to thereby configure the nanoscale devices.
