There are provided a semiconductor device fabricating method for forming a
wiring layer on a semiconductor substrate, followed by cleaning, which may prevent
elution and oxidation of the wiring layer, and a treating liquid used in the fabricating
method. A Cu wiring, an interlayer film over the Cu wiring and an opening in the
interlyaer film to expose the surface of the Cu wiring are formed in a plasma atmosphere.
IPA is sprayed to the semiconductor device, and then, an organic release process
is performed thereto with an amine solvent to remove an etching residue. The semiconductor
device is rinsed with the IPA again to remove the remaining amine, and then is
cleaned with a treating liquid, which is alkalescent. Then, it is rinsed with pure
water or CO2 water and is dried.
