In a semiconductor memory device having a capacitor layer comprising a dielectric
film or a ferroelectric film, as an interlayer insulation film formed between the
capacitor and a wiring layer formed at the upper part thereof or an insulation
film which covers the wiring layer, a multilayered film is used which consists
of a first insulation film and a second insulation film laid upon the other; the
former being a lower layer and being formed of an organic film, and the latter
being an upper layer and being formed of a hard-mask material.
This makes it possible to prevent thin films comprised of a dielectric material
or a ferroelectric material from any deterioration caused by the hydrogen and water
contained in the interlayer insulation film and passivation film of the semiconductor
memory device and also by the stress of these films.
