Method for modifying a chip layout to minimize within-die CD variations caused by flare variations in EUV lithography

   
   

A method including determining a first flare convolution based on a feature density of projected structures on a substrate layout, determining a second flare convolution based on a mask for a given substrate layout, determining a system flare variation by summing the first flare convolution and the second flare convolution, and determining a critical dimension variation based on the system flare variation.

 
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