Magnetoresistive element, and magnetic memory using the same

   
   

A magnetoresistive film has at least a first magnetic layer, a second magnetic layer, a nonmagnetic layer, a third magnetic layer, and a fourth magnetic layer stacked in the order named. In the magnetoresistive film, at least the first magnetic layer contains Gd and the fourth magnetic layer contains Tb and/or Dy, each of the first magnetic layer and fourth magnetic layer has an easy axis of magnetization along a perpendicular direction to a film plane, and the second magnetic layer and the third magnetic layer have a greater spin polarization than the first magnetic layer and the fourth magnetic layer. Furthermore, the second and third magnetic layers are magnetic layers containing at least Co and Co contents thereof are not less than 20 at. % nor more than 90 at. %.

 
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