A system and method is provided herein to fabricate openings in a semiconductor
topography using feed forward control of etch process parameters. In one embodiment,
a method includes measuring one or more dimensional features of a semiconductor
topography to obtain pre-etch values. The method also includes determining a statistical
result of the pre-etch values and adjusting one or more processing parameters if
the statistical result is less than a target value. Subsequently, the method includes
etching the semiconductor topography based upon the statistical result to form
one or more openings in the semiconductor topography. As such, the system and method
described herein fabricates openings using feed forward control of the etch process
parameters to compensate for structural variations within semiconductor topographies
that may exist between wafer-to-wafer and/or between lot-to-lot. In this manner,
the system and method advantageously fabricates openings having profiles and dimensions,
which exhibit little to no deviation from a design specification.
