Slurries for chemical mechanical polishing (CMP) are provided including
a high planarity slurry and high selectivity ratio slurry. A high planarity slurry
includes at least one kind of metal oxide abrasive particle and an anionic polymer
passivation agent having a first concentration. A high selectivity ratio slurry
includes at least one kind of the metal oxide abrasive particle, the passivation
agent in a second concentration that is less than the first concentration of the
passivation agent for the high planarity slurry, one of a quaternary amine and
the salt thereof, and a pH control agent. The high selectivity ratio slurry has
a pH in a range of about over an isoelectric point of a polishing target layer
and less than an isoelectric point of a polishing stopper. In addition, a CMP method
using the CMP slurries having high planarity and high selectivity ratio is provided.
