A semiconductor laser diode and a manufacturing for fabricating the same are
provided.
The semiconductor laser diode includes a substrate, masks that are formed at both
sides of the substrate, a light generating layer that is formed on the substrate
between the masks, current blocking layers that are formed on the masks, respectively,
and first and second electrode that are formed on the bottom surface of the substrate
and on the top surface of the light generating layer, respectively. The optical
generating layer and the current blocking layer are simultaneously formed through
single growth, and the current blocking layer confines current and light in a lateral
direction in the light generating layer. Thus, a semiconductor laser diode manufacturing
process can be simplified, and threshold current for laser oscillation can be lowered.
