The termination of a MOSgated device is formed by a trench bevel which surrounds
the active device area. The trench bevel has flat walls which extend into and through
the epitaxial layer containing the active area which has a lateral extend equal
to or less than the thickness of the epitaxial layer. The surface of the bevel
is coated with a resistive film, preferably, an amorphous silicon which connects
the device source to the device drain to cause the electric field in the epitaxial
silicon to the linearly distributed over the length of the bevel.
