A non-volatile memory comprising a semiconductor active layer provided on an
insulating
substrate, an insulating film provided on the semiconductor active layer, a floating
gate electrode provided on the insulating film, an anodic oxidized film obtained
by anodic oxidation of the floating gate electrode, and a control gate electrode
provided in contact with the anodic oxidized film, and a semiconductor device,
particularly a liquid crystal display device comprising the non-volatile memory.
