An integrated circuit (IC) with metal oxide semiconductor field effect transistor
(MOSFET) circular for generating a reference signal having a value which remains
substantially constant over variations in one or more of the processing (P) of,
power supply voltage (V) for and operating temperature (T) of the IC, with such
reference signal being suitable for use in generating one or more biasing signals
for one or more MOSFETs such that each MOSFET so biased will have a substantially
constant ratio of transconductance and drain current.
