The invention relates to improving the switching reliability of a magnetic memory
cell in a magnetic random access memory (MRAM). Embodiments of the invention add
an antiferromagnet to a magnetic memory cell. An antiferromagnetic layer can be
formed adjacent to a soft layer in the MRAM on a side of the soft layer that is
opposite to a hard layer of the MRAM. One embodiment further includes an additional
interlayer of non-antiferromagnetic material between the antiferromagnetic layer
and the soft layer.
