A dual gate strained-Si MOSFET with thin SiGe dislocation regions and a method
for fabricating the same are provided. The method comprises: forming a first layer
of relaxed SiGe overlying a substrate, having a thickness of less than 5000 ;
forming a second layer of relaxed SiGe overlying the substrate and adjacent to
the first layer of SiGe, having a thickness of less than 5000 ; forming
a layer of strained-Si overlying the first and second SiGe layers; forming a shallow
trench isolation region interposed between the first SiGe layer and the second
SiGe layer; forming an n-well in the substrate and the overlying first layer of
SiGe; forming a p-well in the substrate and the overlying second layer of SiGe;
forming channel regions, in the strained-Si, and forming PMOS and NMOS transistor
source and drain regions.
