The invention provides a magnetic domain controlling structure wherein a lamination
stack M1 adjacent to a magnetoresistive stack of a GMR, CPP-GMR or TMR magnetic
head has at least two magnetic films 14 and 16 anti-ferromagnetically
coupled through a non-magnetic film 15, or the lamination stack M2 disposed
on the end portions of the free layer of the magnetoresistive stack of the GMR
magnetic head has a magnetic layer anti-ferromagnetically coupled to the free layer
2 through the non-magnetic film 27. Ferromagnetic film deposition
dead zone area problems and the consequent problem of film rippling in free layer
portions that reduces element sensitivity are prevented, as is the problem of increased
error from read drift in the magnetic field exchange coupling method, resulting
in a highly stable, highly sensitive MR head with no loss of magnetic field intensity.
