This invention discloses an apparatus for measuring an ion-implantation ion
energy and/or dosage. The apparatus includes a scanning densitometer for measuring
a reflected light from a monitor substrate. The apparatus further uses a monitor
substrate. A thin film is supported on the monitor substrate wherein the thin film
has an optical characteristic that is sensitive to the ion-implantation. The apparatus
further includes a light source for projecting a measuring beam onto the monitor
substrate for generating a reflected light. The apparatus also includes a bare
silicon substrate for measuring a full scale reflected light represented by I0
reflected from the bare silicon substrate with the light source projecting a full
scale light onto the bare silicon substrate. The apparatus further has a light
source control means for controlling the light source to project the full scale
light onto a plurality of points on the monitor substrate before and after an ion
implantation for obtaining reflection intensities I and I. The
apparatus further includes an ion-implantation measurement controller for controlling
the apparatus and for calculating the implantation energy and/or dosage from the
reflected light from the monitor substrate and displaying implant profile data.
