A process for producing a silica-based film which comprises irradiating a film
comprising at least one siloxane compound with electron beams to thereby convert
the film into a film having a dielectric constant of 3 or lower and having silicon
carbide bonds represented by SiCSi is disclosed. The film has an
even thickness, is excellent in storage stability, dielectric constant, mechanical
strength, etc., has low hygroscopicity, and is suitable for use as a dielectric
film in semiconductor devices and the like.
